EXAMINE THIS REPORT ON N TYPE GE

≤ 0.15) is epitaxially grown with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, then the composition is cycled by oxidizing and annealing stages. Mainly because of the preferential oxidation of Si more than Ge [68], the original Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử đụng như là ch�